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| MBR730 - MBR760 7.5A SCHOTTKY BARRIER RECTIFIER Features * * * * * * * Schottky Barrier Chip Guard Ring Die Construction for Transient Protection Low Power Loss, High Efficiency High Surge Capability High Current Capability and Low Forward Voltage Drop For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection Application Plastic Material: UL Flammability Classification Rating 94V-0 TO-220AC L B C K D A Pin 1 Pin 2 Dim M Min 14.22 9.65 2.54 5.84 3/4 12.70 0.51 3.53AE 3.56 1.14 0.30 2.03 4.83 Max 15.88 10.67 3.43 6.86 6.35 14.73 1.14 4.09AE 4.83 1.40 0.64 2.92 5.33 A B C D E G E J N G Mechanical Data * * * * * * Case: Molded Plastic Terminals: Plated Leads Solderable per MIL-STD-202, Method 208 Polarity: See Diagram Weight: 2.3 grams (approx.) Mounting Position: Any Marking: Type Number J R Pin 1 + Pin 2 - K L M P + Case N P R All Dimensions in mm Maximum Ratings and Electrical Characteristics Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Characteristic Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Average Rectified Output Current (Note 1) @ TC = 125C Non-Repetitive Peak Forward Surge Current 8.3ms single half sine-wave superimposed on rated load (JEDEC Method) Forward Voltage Drop Peak Reverse Current at Rated DC Blocking Voltage Typical Junction Capacitance (Note 2) Typical Thermal Resistance Junction to Case (Note 1) Voltage Rate of Change (Rated VR) Operating and Storage Temperature Range @ IF = 7.5A, TC = 25C @IF = 7.5A, TC = 125C @TC = 25C @ TC = 125C Symbol VRRM VRWM VR VR(RMS) IO IFSM VFM IRM Cj RqJc dV/dt Tj, TSTG MBR 730 30 21 @ TA = 25C unless otherwise specified MBR 735 35 24.5 MBR 740 40 28 7.5 150 0.55 0.70 1.0 15 400 3.5 MBR 745 45 31.5 MBR 750 50 35 MBR 760 60 42 Unit V V A A 0.70 0.75 1.0 50 V mA pF C/W V/ms C 10,000 -65 to +150 Notes: 1. Thermal resistance junction to case mounted on heatsink. 2. Measured at 1.0 MHz and applied reverse voltage of 4.0V DC. DS23007 Rev. 7 - 2 1 of 2 MBR730-MBR760 10 IF, INSTANTANEOUS FWD CURRENT (A) 50 MBR730 - MBR745 I(AV), AVERAGE FWD CURRENT (A) 8 10 MBR750 - MBR760 6 4 1.0 2 0 0.1 TJ = 25C Pulse width = 300s 2% duty cycle 0 50 100 150 0.2 0.4 0.6 0.8 1.0 TC, CASE TEMPERATURE (C) Fig. 1 Fwd Current Derating Curve 175 VF, INSTANTANEOUS FWD VOLTAGE (V) Fig. 2 Typ Instantaneous Fwd Characteristics IFSM, PEAK FWD SURGE CURRENT (A) 8.3 ms Single half sine-wave (JEDEC method) 4000 150 125 100 Cj, CAPACITANCE (pF) 1000 75 50 25 100 1 10 NUMBER OF CYCLES AT 60Hz Fig. 3 Max Non-Repetitive Surge Current 10 Tj = 125C 100 0.1 1.0 10 100 VR, REVERSE VOLTAGE (V) Fig. 4 Typical Junction Capacitance IR, INSTANTANEOUS REVERSE CURRENT (mA) 1.0 0.1 Tj = 75C 0.01 Tj = 25C 0.001 0 20 40 60 80 100 Resistive or Inductive load 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) Fig. 5 Typical Reverse Characteristics DS23007 Rev. 7 - 2 2 of 2 MBR730-MBR760 |
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